Machined Surface Measurement Using Scattered and Diffracted Light
نویسندگان
چکیده
منابع مشابه
Change of diffused and scattered light with surface roughness of p-type porous Silicon
Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...
متن کاملChange of diffused and scattered light with surface roughness of p-type porous Silicon
Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...
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A large-scale, high speed, high resolution, phase-only microelectromechanical system (MEMS) spatial light modulator (SLM) has been fabricated. Using polysilicon thin film technology, the micro mirror array offers significant improvement in SLM speed in comparison to alternative modulator technologies. Pixel opto-electromechanical characterization has been quantified experimentally on large scal...
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Surface plasmon polaritons on thin metal films are a well studied phenomena when excited using prism coupled geometries such as the Kretschmann attenuated total reflection configuration. Here we describe a novel interference pattern in the conically scattered light emanating from such a configuration when illuminated by a focused beam. We observe conditions indicating only self-interference of ...
متن کاملchange of diffused and scattered light with surface roughness of p-type porous silicon
porous silicon samples were prepared by electrochemical etching method for different etching times. the structural properties of porous silicon (ps) samples were determined from the atomic force microscopy (afm) measurements. the surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. u...
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ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 2007
ISSN: 1882-675X,0912-0289
DOI: 10.2493/jjspe.73.1308